H-decorated native defect
German translation: an Fehlstellen angelagerte Wasserstoffatome
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| 05:33 Feb 17, 2010 |
| English to German translations [PRO] Science - Physics | |||||||
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|  Selected response from: Johannes Gleim Local time: 22:18 | ||||||
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| 4 | an Fehlstellen angelagerte Wasserstoffatome |
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| Discussion entries: 3 | |
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1 hr confidence: 
| h-decorated native defect an Fehlstellen angelagerte Wasserstoffatome Explanation: Diese Untersuchung lieferte essentielle Erkenntnisse darüber, wie Wasserstoff in ausreichend hohen Konzentrationen an der vergrabenen Defektschicht angelagert wird, um letztlich den Abschälvorgang der oberflächennahen Siliziumschicht im Rahmen eines Soft- Cut-Prozesses zu ermöglichen. : rechts: Krater bei zehnfach höhere Vergrößerung T = 500 °C, 20 × 20 μm T = 550 °C, 20 × 20 μm T = 600 °C, 25 × 25 μm T = 650 °C, 25 × 25 μm Wasserstoff an den offenen Si-Bindungen der Wände der m-Vs angelagert. : [26] Y. J. Chabal, M. K. Weldon, Y. Caudano, B. B. Stefanov, K. Raghavachari, Spectroscopic Studies of H-Decorated Interstitials and Vacancies in Thin-Film Silicon Exfoliation, Physica B 273-274, 152 (1999) http://www.fernuni-hagen.de/imperia/md/content/fakultaetfuer... Neben dem klassischen Ausformieren des Dielektrikums durch Bildung eines sperrenden Oxids kann es bei eingelagerten Fremdstoffen zu einer Fehlstelle kommen, die ständig einen lokalen Leckstrom verursacht. Deutsch: www.epcos.com/web/generator/Web/Sec...=490592.html Apart from the classical production of the dielectric by formation of a non-conductive oxide, foreign inclusions may produce a defect site that continuously generates a local leakage current. Englisch: www.epcos.com/web/generator/Web/Sec...=490592.html http://www.linguee.de/uebersetzung/englisch/fehlstelle.html -------------------------------------------------- Note added at 1 hr (2010-02-17 06:59:18 GMT) -------------------------------------------------- Vacancies are sites which are usually occupied by an atom but which are unoccupied. If a neighboring atom moves to occupy the vacant site, the vacancy moves in the opposite direction to the site which used to be occupied by the moving atom. The stability of the surrounding crystal structure guarantees that the neighboring atoms will not simply collapse around the vacancy. In some materials, neighboring atoms actually move away from a vacancy, because they can form better bonds with atoms in the other directions. A vacancy (or pair of vacancies in an ionic solid) is sometimes called a Schottky defect. Interstitials are atoms which occupy a site in the crystal structure at which there is usually not an atom. They are generally high energy configurations. Small atoms in some crystals can occupy interstices without high energy, such as hydrogen in palladium. Schematic illustration of some simple point defect types in a monatomic solidA nearby pair of a vacancy and an interstitial is often called a Frenkel defect or Frenkel pair. This is caused when an ion moves into an interstitial site and creating a vacancy. http://en.wikipedia.org/wiki/Crystallographic_defect -------------------------------------------------- Note added at 1 hr (2010-02-17 07:02:20 GMT) -------------------------------------------------- Punktfehler sind Defekte, die die Ausdehnung eines einzelnen Atoms haben. Formal sind sie also auf einen einzelnen Gitterplatz beschränkt. Es lassen sich drei Fälle unterscheiden. Leerstellen (vacancies) sind freie Gitterplätze, die im regulären Gitter besetzt sind. Zwischengitteratome (interstitials) sitzen auf Plätzen, die im regulären Gitter unbesetzt sind. Solche Defekte werden auch als interstitielle Fehlstellen bezeichnet. Substitutionsatome (antisites) sitzen auf Gitterplätzen, die im regulären Gitter durch eine andere Atomart besetzt sind. Ein Sonderfall sind Farbzentren, bei denen ein Anion durch ein Elektron ersetzt ist. http://de.wikipedia.org/wiki/Gitterfehler Die Satzteil kann folglich auch mit "H-Substitution" oder ausführlich "an Fehlstellen sitzende Wasserstoffatome" übersetzt werden -------------------------------------------------- Note added at 1 hr (2010-02-17 07:29:08 GMT) -------------------------------------------------- Reference from related English page (see above): Single references ^ P. Ehrhart, Properties and interactions of atomic defects in metals and alloys,volume 25 of Landolt-Börnstein, New Series III, chapter 2, page 88, Springer, Berlin, 1991 ^ R. W. Siegel, Atomic Defects and Diffusion in Metals, in Point Defects and Defect Interactions in Metals, edited by J.-I. Takamura, page 783, North Holland, Amsterdam, 1982 ^ J. H. Crawford and L. M. Slifkin, ed (1975). Point Defects in Solids. New York: Plenum Press. ^ G. D. Watkins, Native defects and their interactions with impurities in silicon, in Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, volume 469 of MRS Symposium Proceedings, page 139, Materials Research Society, Pittsburgh, 1997 ^ Mattila, T; Nieminen, RM (1995). "Direct Antisite Formation in Electron Irradiation of GaAs.". Physical review letters 74 (14): 2721–2724. http://en.wikipedia.org/wiki/Crystallographic_defect |
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